Majumder, Prodyut and Takoudis, Christos (2008) Thermal stability of Ti/Mo and Ti/MoN nanostructures for barrier applications in Cu interconnects. NANOTECHNOLOGY, 19 (20).
Full text is not hosted in this archive but may be available via the Official URL, or by requesting a copy from the corresponding author.
Official URL: http://iopscience.iop.org/0957-4484/19/20/205202
This work focuses on the barrier capabilities of sputter deposited Ti/Mo and Ti/MoN nanofilms against diffusion of Cu into Si substrates. The thermal stability of the corresponding bi-layer barrier structures is investigated after annealing Cu/barrier layer/Si samples at different temperatures in N-2 for 5 min. The drastic increase in sheet resistance of Cu and the probing of Cu3Si with x-ray diffraction after high temperature annealing indicate the failure of these barrier structures. The formation of Cu3Si at the barrier breakdown temperature is also confirmed by scanning electron microscopy and energy dispersive x-ray spectroscopy. Cu diffusion barrier performance analyses show that a Ti(5 nm)/MoN(5 nm) bi-layer nanostructure fails only after annealing at 800 degrees C; on the other hand, a Ti(5 nm)/Mo(5 nm) barrier stack is found to break down at 700 degrees C.
|Subjects:||Physical Science > Nanophysics|
Material Science > Nanochemistry
Material Science > Nanostructured materials
Engineering > Nanotechnology applications in ICT
|Deposited On:||12 Apr 2010 15:20|
|Last Modified:||12 Apr 2010 15:20|
Repository Staff Only: item control page