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Hybrid permeable metal-base transistor with large common-emitter current gain and low operational voltage

Feng, Chengang and Yi, Mingdong and Yu, Shunyang and Hummelgen, Ivo A. and Zhang, Tong and Ma, Dongge (2008) Hybrid permeable metal-base transistor with large common-emitter current gain and low operational voltage. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 8 (4). pp. 2037-2043.

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Abstract

We demonstrate the suitability of N,N'-diphenyl-N,N'-bis(1-naphthylphenyl)-1,1'-biphenyl-4,4'-diamine (NPB), an organic semiconductor widely used in organic light-emitting diodes (OLEDs), for high-gain, low operational voltage nanostructured vertical-architecture transistors, which operate as permeable-base transistors. By introducing vanadium oxide (V2O5) between the injecting metal and NPB layer at the transistor emitter, we reduced the emitter operational voltage. The addition of two Ca layers, leading to a Ca/Ag/Ca base, allowed to obtain a large value of common-emitter current gain, but still retaining the permeable-base transistor character. This kind of vertical devices produced by simple technologies offer attractive new possibilities due to the large variety of available molecular semiconductors, opening the possibility of incorporating new functionalities in silicon-based devices.

Item Type:Article
Uncontrolled Keywords:permeable-base transistor; organic semiconductor; hybrid transistor
Subjects:Material Science > Functional and hybrid materials
Engineering > Nanotechnology applications in ICT
ID Code:6074
Deposited By:IoN
Deposited On:24 Aug 2009 14:28
Last Modified:24 Aug 2009 14:28

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