Lee, W. C. and Lee, Y. J. and Tung, L. T. and Wu, S. Y. and Lee, C. H. and Hong, M. and Ng, H. M. and Kwo, J. and Hsu, C. H. (2008) Growth and structural characteristics of GaN/AlN/nanothick gamma-Al2O3/Si (111). JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 26 (3). pp. 1064-1067.
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The authors report on the growth of GaN by nitrogen plasma-assisted molecular beam epitaxy (MBE) on a 2 in. Si (111) substrates with a nanothick (similar to 4.8 nm thick) gamma-Al2O3 as a template/buffer. A thin layer of MBE-AlN similar to 40 nm thick was inserted prior to the growth of GaN. High-resolution transmission electron microscopy (HR-TEM) and high-resolution x-ray diffraction studies indicated that both of the nanothick gamma-Al2O3 and AlN are a single crystal. Reflection high-energy electron diffraction, high-resolution x-ray scattering using synchrotron radiation, and cross-sectional HR-TEM measurements indicated an orientation relationship of GaN(0002)parallel to AlN(0002)parallel to gamma-Al2O3(111)parallel to Si(111) and GaN[10-10]parallel to AlN[10-10]parallel to gamma-Al2O3[2-1-1]parallel to Si[2-1-1]. A dislocation density of 5x(10(8)-10(9))/cm(2) in the GaN similar to 0.5 mu m thick was determined using cross-sectional TEM images under weak-beam dark-field conditions. (C) 2008 American Vacuum Society.
|Uncontrolled Keywords:||molecular beam epitaxy - transmission electron microscopy - gallium nitride - silicon surface|
|Subjects:||Material Science > Functional and hybrid materials|
Material Science > Nanofabrication processes and tools
|Deposited On:||02 Sep 2009 12:47|
|Last Modified:||02 Sep 2009 12:47|
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