Zhilyaev, A. P. and Gimazov, A. A. and Soshnikova, E. P. and Revesz, A. and Langdon, T. G. (2008) Mechanical properties of sputtered silicon oxynitride films by nanoindentation. MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 489 (1-2). pp. 207-212.
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Silicon oxynitride (SiON) has received a great deal of attention in micro-electro-mechanical system (MEMS) integration due to its composition dependent tunability in optical, electronic and mechanical properties. In this work, silicon oxynitride films with different oxygen and nitrogen content were deposited by RF magnetron sputtering. Energy dispersive X-ray (EDX) spectroscopy and Fourier-transform infrared (FT-IR) spectroscopy were employed to characterize the SiON films with respect to stoichiometric composition and atomic bonding structure. Time-dependent plastic deformation (creep) of SiON films were investigated by depth-sensing nanoindentation at room temperature. Young's modulus and indentation-hardness were found correlated with the nitrogen/oxygen ratio in SiON films. Results from nanoindentation creep indicated that plastic flow was less homogenous with increasing nitrogen content in film composition. Correspondingly, a deformation mechanism based on atomic bonding structure and shear transformation zone (STZ) plasticity theory was proposed to interpret creep behaviors of sputtered SiON films. (C) 2008 Elsevier B.V. All rights reserved.
|Uncontrolled Keywords:||silicon oxynitride; sputtering; nanoindentation; creep; stress exponent; shear transformation zone|
|Subjects:||Material Science > Functional and hybrid materials|
|Deposited On:||04 Sep 2009 11:06|
|Last Modified:||04 Sep 2009 11:06|
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