Sun, Baoquan and Peterson, Rebecca L. and Sirringhaus, Henning and Mori, Kiyotaka (2007) Low-temperature sintering of in-plane self-assembled ZnO nanorods for solution-processed high-performance thin film transistors. JOURNAL OF PHYSICAL CHEMISTRY C, 111 (51). pp. 18831-18835.
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Official URL: http://pubs.acs.org/doi/abs/10.1021/jp077740f
ZnO is an attractive active semiconducting material for thin-film transistor (TFT) applications due to its high band gap, high mobility, ease of forming Ohmic contacts, and low toxicity. Here we present a process for solution fabrication of ZnO TFTs based on a simple, double-layer spin-coating process during which a dense layer of in-plane zinc oxide nanorods is deposited first, followed by coating of a chemical precursor solution and low-temperature annealing. First, a lower ZnO nanorod concentration can lead to the self-assembly of nanorods along the in-plane direction to form a relatively dense semiconductor layer. Then the chemical precursor solution sinters the nanorods and improves the contact between them. The n-channel TFTs exhibit high ON/OFF ratio of 105−106, mobilities of 1.2 cm2 V-1 s-1 and low threshold voltages of about −4 V with low hysteresis. We show that the quality of the semiconductor film and the minimum annealing temperature depends sensitively on the thickness and composition of the two layers.
|Subjects:||Material Science > Nanofabrication processes and tools|
Physical Science > Nanoelectronics
Material Science > Nanostructured materials
|Deposited On:||06 Aug 2009 10:04|
|Last Modified:||06 Aug 2009 10:04|
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