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Nanocrystalline diamond films deposited by the hot cathode direct current plasma chemical vapor deposition method with different compositions of CH4/Ar/H-2 gas mixture

Zeng, Leyong and Peng, Hongyan and Wang, Weibiao and Chen, Yuqiang and Lei, Da and Qi, Wentao and Liang, Jingqiu and Zhao, Jialong and Kong, Xianggui and Zhang, Hong (2008) Nanocrystalline diamond films deposited by the hot cathode direct current plasma chemical vapor deposition method with different compositions of CH4/Ar/H-2 gas mixture. JOURNAL OF PHYSICAL CHEMISTRY C, 112 (5). pp. 1401-1406.

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Official URL: http://pubs.acs.org/doi/abs/10.1021/jp710082n

Abstract

Nanocrystalline diamond films with different grain sizes were synthesized on Si substrate by the hot cathode direct current plasma chemical vapor deposition method with different compositions of CH4/Ar/H2 gas mixture. The morphology and microstructure of the obtained products were characterized by scanning electron microscopy, atomic force microscopy, high-resolution transmission electron microscopy, X-ray diffraction, and Raman spectroscopy. The results showed that the composition of the CH4/Ar/H2 gas mixture affected greatly the grain sizes, surface smoothness, and crystal quality of the nanocrystalline diamond films. With the increase of CH4 concentration, the grain sizes got smaller and the surface of the films got smoother. However, the grain sizes got smaller and the crystal quality was weakened with the increase of Ar concentration. In the process of deposition, SiC was formed at the substrate before the growth of nanocrystalline diamond films, which increased the secondary nucleation of nanocrystalline diamonds. To obtain the nanocrystalline diamond films with uniform small grain sizes, good surface smoothness, and little non-diamond phase, the optimal composition of the CH4/Ar/H2 gas mixture is 6/70/30 and 7/70/30.

Item Type:Article
Subjects:Material Science > Nanofabrication processes and tools
ID Code:5980
Deposited By:IoN
Deposited On:06 Aug 2009 10:12
Last Modified:06 Aug 2009 10:12

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