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Measurements of local optical properties of Si-doped GaAs (110) surfaces using modulation scanning tunneling microscope cathodoluminescence spectroscopy

Watanabe, Kentaro and Nakamura, Yoshiaki and Ichikawa, Masakazu (2008) Measurements of local optical properties of Si-doped GaAs (110) surfaces using modulation scanning tunneling microscope cathodoluminescence spectroscopy. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 26 (1). pp. 195-200.

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Official URL: http://scitation.aip.org.proxy.lib.strath.ac.uk/jo...

Abstract

The authors developed modulation scanning tunneling microscope cathodoluminescence (STM-CL) spectroscopy where low-energy (similar to 100 eV) electrons field-emitted from scanning tunneling microscope(STM) tips were used as a bright excitation source. The modulation STM-CL spectroscopy of Si-doped GaAs (110) cleaved surfaces showed that the peak redshifted from GaAs band-edge luminescence in some of the sample positions. These position-dependent redshifts, which were explained by the transition related to local Si acceptors, demonstrated a spatial resolution of less than 600 nm in the modulation STM-CL spectroscopy. (c) 2008 American Vacuum Society.

Item Type:Article
Uncontrolled Keywords:scanning tunneling microscope - luminescence - optical properties - spectroscopy
Subjects:Analytical Science > Microscopy and probe methods
Material Science > Functional and hybrid materials
ID Code:5967
Deposited By:IoN
Deposited On:02 Sep 2009 13:26
Last Modified:02 Sep 2009 13:26

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