Watanabe, Kentaro and Nakamura, Yoshiaki and Ichikawa, Masakazu (2008) Measurements of local optical properties of Si-doped GaAs (110) surfaces using modulation scanning tunneling microscope cathodoluminescence spectroscopy. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 26 (1). pp. 195-200.
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Abstract
The authors developed modulation scanning tunneling microscope cathodoluminescence (STM-CL) spectroscopy where low-energy (similar to 100 eV) electrons field-emitted from scanning tunneling microscope(STM) tips were used as a bright excitation source. The modulation STM-CL spectroscopy of Si-doped GaAs (110) cleaved surfaces showed that the peak redshifted from GaAs band-edge luminescence in some of the sample positions. These position-dependent redshifts, which were explained by the transition related to local Si acceptors, demonstrated a spatial resolution of less than 600 nm in the modulation STM-CL spectroscopy. (c) 2008 American Vacuum Society.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | scanning tunneling microscope - luminescence - optical properties - spectroscopy |
| Subjects: | Analytical Science > Microscopy and probe methods Material Science > Functional and hybrid materials |
| ID Code: | 5967 |
| Deposited By: | IoN |
| Deposited On: | 02 Sep 2009 13:26 |
| Last Modified: | 02 Sep 2009 13:26 |
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