Ng, W. N. and Leung, C. H. and Lai, P. T. and Choi, H. W. (2008) Nanostructuring GaN using microsphere lithography. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 26 (1). pp. 76-79.
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The authors report on the fabrication and characterization of nanopillar arrays on GaN substrates using the technique of microsphere lithography. Self-assembled hexagonally packed silica microsphere arrays were formed on GaN wafers by spin coating and tilting. By precision control of process parameters, a monolayer can be formed over a wide region. The silica microspheres act as a hard mask for pattern transfer of the nanostructures. After dry etching, arrays of nanopillars were formed on the surface of the wafer. The ordered nanostructures can be clearly seen in the scanning electron microscopy images, while photoluminescence measurements revealed a twofold enhancement of light emission intensity. (C) 2008 American Vacuum Society.
|Uncontrolled Keywords:||nanostructuring - lithography - nanopillar - silica microsphere - microscopy|
|Subjects:||Analytical Science > Microscopy and probe methods|
Material Science > Nanofabrication processes and tools
|Deposited On:||02 Sep 2009 13:32|
|Last Modified:||02 Sep 2009 13:32|
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