Nano Archive

Nanostructuring GaN using microsphere lithography

Ng, W. N. and Leung, C. H. and Lai, P. T. and Choi, H. W. (2008) Nanostructuring GaN using microsphere lithography. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 26 (1). pp. 76-79.

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Abstract

The authors report on the fabrication and characterization of nanopillar arrays on GaN substrates using the technique of microsphere lithography. Self-assembled hexagonally packed silica microsphere arrays were formed on GaN wafers by spin coating and tilting. By precision control of process parameters, a monolayer can be formed over a wide region. The silica microspheres act as a hard mask for pattern transfer of the nanostructures. After dry etching, arrays of nanopillars were formed on the surface of the wafer. The ordered nanostructures can be clearly seen in the scanning electron microscopy images, while photoluminescence measurements revealed a twofold enhancement of light emission intensity. (C) 2008 American Vacuum Society.

Item Type:Article
Uncontrolled Keywords:nanostructuring - lithography - nanopillar - silica microsphere - microscopy
Subjects:Analytical Science > Microscopy and probe methods
Material Science > Nanofabrication processes and tools
ID Code:5966
Deposited By:IoN
Deposited On:02 Sep 2009 13:32
Last Modified:02 Sep 2009 13:32

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