Lee, Woo and Han, Hee and Lotnyk, Andriy and Schubert, Markus Andreas and Senz, Stephan and Alexe, Marin and Hesse, Dietrich and Baik, Sunggi and Goesele, Ulrich (2008) Individually addressable epitaxial ferroelectric nanocapacitor arrays with near Tb inch(-2) density. NATURE NANOTECHNOLOGY, 3 (7). pp. 402-407.
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Official URL: http://www.nature.com/nnano/journal/v3/n7/abs/nnan...
Ferroelectric materials have emerged in recent years as an alternative to magnetic and dielectric materials for nonvolatile data-storage applications1, 2, 3, 4, 5. Lithography is widely used to reduce the size of data-storage elements in ultrahigh-density memory devices6, 7, 8, 9. However, ferroelectric materials tend to be oxides with complex structures that are easily damaged by existing lithographic techniques, so an alternative approach is needed to fabricate ultrahigh-density ferroelectric memories. Here we report a high-temperature deposition process that can fabricate arrays of individually addressable metal/ferroelectric/metal nanocapacitors with a density of 176 Gb inch-2. The use of an ultrathin anodic alumina membrane as a lift-off mask makes it possible to deposit the memory elements at temperatures as high as 650 °C, which results in excellent ferroelectric properties.
|Subjects:||Physical Science > Nanoelectronics|
|Deposited On:||11 Sep 2009 15:27|
|Last Modified:||11 Sep 2009 15:27|
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