Trinh, M. Tuan and Houtepen, Arian J. and Schins, Juleon M. and Hanrath, Tobias and Piris, Jorge and Knulst, Walter and Goossens, Albert P. L. M. and Siebbeles, Laurens D. A. (2008) In spite of recent doubts carrier multiplication does occur in PbSe nanocrystals. NANO LETTERS, 8 (6). pp. 1713-1718.
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Official URL: http://pubs.acs.org/doi/abs/10.1021/nl0807225
Efficient carrier multiplication has been reported for several semiconductor nanocrystals: PbSe, PbS, PbTe, CdSe, InAs, and Si. Some of these reports have been challenged by studies claiming that carrier multiplication does not occur in CdSe, CdTe, and InAs nanocrystals, thus raising legitimate doubts concerning the occurrence of carrier multiplication in the remaining materials. Here, conclusive evidence is given for its occurrence in PbSe nanocrystals using femtosecond transient photobleaching. In addition, it is shown that a correct determination of carrier-multiplication efficiency requires spectral integration over the photobleach feature. The carrier multiplication efficiency we obtain is significantly lower than what has been reported previously, and it remains an open question whether it is higher in nanocrystals than it is in bulk semiconductors.
|Uncontrolled Keywords:||MULTIPLE EXCITON GENERATION; QUANTUM DOTS; SEMICONDUCTOR NANOCRYSTALS; COLLOIDAL PBSE; EFFICIENCY; SILICON; SOLIDS|
|Subjects:||Material Science > Functional and hybrid materials|
Physical Science > Nanoelectronics
|Deposited On:||16 Sep 2009 11:31|
|Last Modified:||16 Sep 2009 11:31|
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