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Double-strain effect in doped La0.7Ca0.3MnO3PLD grown thin films and fabrication of high-resistance tunnel junction using a novel nano-scale insulating tunnel barrier

Rao , M.S.R. and Ravindranath, V. and Lu , Y. and Klien , J. and Gross , R.. (2002) Double-strain effect in doped La0.7Ca0.3MnO3PLD grown thin films and fabrication of high-resistance tunnel junction using a novel nano-scale insulating tunnel barrier. Journal of Physics D: Applied Physics, 35 (4). pp. 287-290.

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Abstract

Thin films of La0.65R0.05Ca0.3MnO3 (R Ho and Y) grown using pulsed laser deposition (PLD) technique on (100) NdGaO3 (NGO) single-crystal substrates have shown a decrease in TP farther from the corresponding values obtained on bulk samples. This decrease could be attributed to an additional substrate strain effect. The uniqueness of the present result is that Ho-doped La0.7Ca0.3MnO3 (LCMO) films have shown drastic reduction in resistance (max) compared to that of Y-doping similar to what has been observed in the bulk samples. We have also fabricated a novel FM/I/FM (FM ferromagnet (La2/3Ba1/3MnO3 (LBMO) in this case); I insulator) tunnel junction by replacing the widely used SrTiO3 (STO) insulating layer by an insulating phase of Ho-doped LCMO composition (La0.55Ho0.15Ca0.3MnO3) to study the MR and electronic correlation effects. High resistance values have been realized across junctions made up of the LCMO-based insulating layer. This result could open up new avenues in TMR research.

Item Type:Article
Subjects:Physical Science > Nanophysics
Physical Science > Nano objects
Material Science > Nanochemistry
Material Science > Nanostructured materials
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
Faculty of Engineering, Science and Mathematics > School of Chemistry
ID Code:5621
Deposited By:JNCASR
Deposited On:11 Aug 2009 07:20
Last Modified:11 Aug 2009 07:20

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