Nano Archive

Sub-100 nanometer channel length Ge/Si nanowire transistors with potential for 2 THz switching speed

Hu, Yongjie and Xiang, Jie and Liang, Gengchiau and Yan, Hao and Lieber, Charles M. (2008) Sub-100 nanometer channel length Ge/Si nanowire transistors with potential for 2 THz switching speed. NANO LETTERS, 8 (3). pp. 925-930.

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Official URL: http://pubs.acs.org/doi/abs/10.1021/nl073407bv

Abstract

Ge/Si core/shell nanowires (NWs) are attractive and flexible building blocks for nanoelectronics ranging from field-effect transistors (FETs) to low-temperature quantum devices. Here we report the first studies of the size-dependent performance limits of Ge/Si NWFETs in the sub-100 nm channel length regime. Metallic nanoscale electrical contacts were made and used to define sub-100 nm Ge/Si channels by controlled solid-state conversion of Ge/Si NWs to NiSixGey alloys. Electrical transport measurements and modeling studies demonstrate that the nanoscale metallic contacts overcome deleterious short-channel effects present in lithographically defined sub-100 nm channels. Data acquired on 70 and 40 nm channel length Ge/Si NWFETs with a drain-source bias of 0.5 V yield transconductance values of 78 and 9116, respectively, and maximum on-currents of 121 and 152 mu A. The scaled transconductance and on-current values for a gate and bias voltage window of 0.5 V were 6.2 mS/mu m and 2.1 mA/mu m, respectively, for the 40 nm device and exceed the best reported values for planar Si and NW p-type FETs. In addition, analysis of the intrinsic switching delay shows that terahertz intrinsic operation speed is possible when channel length is reduced to 70 nm and that an intrinsic delay of 0.5 ps is achievable in our 40 nm device. Comparison of the experimental data with simulations based on a semiclassical, ballistic transport model suggests that these sub-100 nm Ge/Si NWFETs with integrated high-K gate dielectric operate near the limit.

Item Type:Article
Subjects:Physical Science > Nano objects
Physical Science > Nanoelectronics
Engineering > Nanotechnology applications in ICT
ID Code:558
Deposited By:IoN
Deposited On:20 Jan 2009 14:53
Last Modified:20 Jan 2009 14:53

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