Lin, Ya-Ting and Shi, Jen-Bin and Chen, Yu-Cheng and Chen, Chih-Jung and Wu, Po-Feng (2009) Synthesis and Characterization of Tin Disulfide (SnS2) Nanowires. Nanoscale Research Letters, 4 (7). pp. 694-698.
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Official URL: http://www.springerlink.com/content/m3416287113887...
Abstract
The ordered tin disulfide (SnS2) nanowire arrays were first fabricated by sulfurizing the Sn nanowires, which are embedded in the nanochannels of anodic aluminum oxide (AAO) template. SnS2 nanowire arrays are highly ordered and highly dense. X-ray diffraction (XRD) and corresponding selected area electron diffraction (SAED) patterns demonstrate the SnS2 nanowire is hexagonal polycrystalline. The study of UV/Visible/NIR absorption shows the SnS2 nanowire is a wide-band semiconductor with three band gap energies (3.3, 4.4, and 5.8 eV).
| Item Type: | Article |
|---|---|
| Subjects: | Physical Science > Nanoelectronics Material Science > Nanostructured materials |
| ID Code: | 5547 |
| Deposited By: | IoN |
| Deposited On: | 30 Jun 2009 10:53 |
| Last Modified: | 30 Jun 2009 10:53 |
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