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Synthesis and Characterization of Tin Disulfide (SnS2) Nanowires

Lin, Ya-Ting and Shi, Jen-Bin and Chen, Yu-Cheng and Chen, Chih-Jung and Wu, Po-Feng (2009) Synthesis and Characterization of Tin Disulfide (SnS2) Nanowires. Nanoscale Research Letters, 4 (7). pp. 694-698.


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The ordered tin disulfide (SnS2) nanowire arrays were first fabricated by sulfurizing the Sn nanowires, which are embedded in the nanochannels of anodic aluminum oxide (AAO) template. SnS2 nanowire arrays are highly ordered and highly dense. X-ray diffraction (XRD) and corresponding selected area electron diffraction (SAED) patterns demonstrate the SnS2 nanowire is hexagonal polycrystalline. The study of UV/Visible/NIR absorption shows the SnS2 nanowire is a wide-band semiconductor with three band gap energies (3.3, 4.4, and 5.8 eV).

Item Type:Article
Subjects:Physical Science > Nanoelectronics
Material Science > Nanostructured materials
ID Code:5547
Deposited By:IoN
Deposited On:30 Jun 2009 10:53
Last Modified:30 Jun 2009 10:53

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