Wang, Lu and Li, Meicheng and Xiong, Min and Zhao, Liancheng (2009) Effect of Interfacial Bonds on the Morphology of InAs QDs Grown on GaAs (311) B and (100) Substrates. Nanoscale Research Letters, 4 (7). pp. 689-693.
Official URL: http://www.springerlink.com/content/54037627jq4982...
The morphology and transition thickness (tc) for InAs quantum dots (QDs) grown on GaAs (311) B and (100) substrates were investigated. The morphology varies with the composition of buffer layer and substrate orientation. And tc decreased when the thin InGaAs was used as a buffer layer instead of the GaAs layer on (311) B substrates. For InAs/(In)GaAs QDs grown on high miller index surfaces, both the morphology and tc can be influenced by the interfacial bonds configuration. This indicates that buffer layer design with appropriate interfacial bonds provides an approach to adjust the morphologies of QDs grown on high miller surfaces.
|Subjects:||Physical Science > Quantum phenomena|
Material Science > Nanostructured materials
|Deposited On:||30 Jun 2009 11:12|
|Last Modified:||30 Jun 2009 11:12|
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