Othonos, Andreas and Zervos, Matthew and Tsokkou, Demetra (2009) Femtosecond Carrier Dynamics in In2O3 Nanocrystals. Nanoscale Research Letters, 4 (6). pp. 526-531.
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Official URL: http://www.springerlink.com/content/63k2x8t7012770...
We have studied carrier dynamics in In2O3 nanocrystals grown on a quartz substrate using chemical vapor deposition. Transient differential absorption measurements have been employed to investigate the relaxation dynamics of photo-generated carriers in In2O3 nanocrystals. Intensity measurements reveal that Auger recombination plays a crucial role in the carrier dynamics for the carrier densities investigated in this study. A simple differential equation model has been utilized to simulate the photo-generated carrier dynamics in the nanocrystals and to fit the fluence-dependent differential absorption measurements. The average value of the Auger coefficient obtained from fitting to the measurements was γ = 5.9 ± 0.4 × 10−31 cm6 s−1. Similarly the average relaxation rate of the carriers was determined to be approximately T =110±10 ps. Time-resolved measurements also revealed ~25 ps delay for the carriers to reach deep traps states which have a subsequent relaxation time of approximately 300 ps.
|Subjects:||Material Science > Nanostructured materials|
|Deposited On:||22 May 2009 15:54|
|Last Modified:||22 May 2009 15:54|
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