Shalish, I. and Seryogin, G. and Yi, W. and Bao, J. M. and Zimmler, M. A. and Likovich, E. and Bell, D. C. and Capasso, F. and Narayanamurti, V. (2009) Epitaxial Catalyst-Free Growth of InN Nanorods on c-Plane Sapphire. Nanoscale Research Letters, 4 (6). pp. 532-537.
|PDF - Published Version|
Official URL: http://www.springerlink.com/content/e07g2653q13062...
We report observation of catalyst-free hydride vapor phase epitaxy growth of InN nanorods. Characterization of the nanorods with transmission electron microscopy, and X-ray diffraction show that the nanorods are stoichiometric 2H-InN single crystals growing in the  orientation. The InN rods are uniform, showing very little variation in both diameter and length. Surprisingly, the rods show clear epitaxial relations with the c-plane sapphire substrate, despite about 29% of lattice mismatch. Comparing catalyst-free with Ni-catalyzed growth, the only difference observed is in the density of nucleation sites, suggesting that Ni does not work like the typical vapor-liquid-solid catalyst, but rather functions as a nucleation promoter by catalyzing the decomposition of ammonia. No conclusive photoluminescence was observed from single nanorods, while integrating over a large area showed weak wide emissions centered at 0.78 and at 1.9 eV.
|Subjects:||Physical Science > Nano objects|
|Deposited On:||22 May 2009 15:59|
|Last Modified:||22 May 2009 15:59|
Repository Staff Only: item control page