Nano Archive

Plasma-deposited Ge nanoisland films on Si: is Stranski-Krastanow fragmentation unavoidable?

Levchenko, I. and Ostrikov, K. and Murphy, A. B. (2008) Plasma-deposited Ge nanoisland films on Si: is Stranski-Krastanow fragmentation unavoidable? JOURNAL OF PHYSICS D-APPLIED PHYSICS, 41 (9).

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Official URL: http://dx.doi.org/10.1088/0022-3727/41/9/092001

Abstract

The formation of Ge quantum dot arrays by deposition from a low-temperature plasma environment is investigated by kinetic Monte Carlo numerical simulation. It is demonstrated that balancing of the Ge influx from the plasma against surface diffusion provides an effective control of the surface processes and can result in the formation of very small densely packed quantum dots. In the supply-controlled mode, a continuous layer is formed which is then followed by the usual Stranski-Krastanow fragmentation with a nanocluster size of 10 nm. In the diffusion-controlled mode, with the oversupply relative to the surface diffusion rate, nanoclusters with a characteristic size of 3 nm are formed. Higher temperatures change the mode to supply controlled and thus encourage formation of the continuous layer that then fragments into an array of large size. The use of a high rate of deposition, easily accessible using plasma techniques, changes the mode to diffusion controlled and thus encourages formation of a dense array of small nanoislands.

Item Type:Article
Subjects:Material Science > Nanofabrication processes and tools
Material Science > Nanostructured materials
ID Code:550
Deposited By:IoN
Deposited On:20 Jan 2009 13:27
Last Modified:29 Jan 2009 15:36

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