Peng, Hailin and Zhang, Xiao Feng and Twesten, Ray D. and Cui, Yi (2009) Vacancy ordering and lithium insertion in III2VI3 nanowires. Nano Research, 2 (4). pp. 327-335.
|PDF - Published Version|
Official URL: http://www.thenanoresearch.com/files/327.pdf
Superlattice structures resulting from vacancy ordering have been observed in many materials. Here we report vacancy ordering behavior in III2VI3 nanowires. The formation of layer-like structural vacancies has been achieved during the synthesis of In2Se3 nanowires through a vapor-transport route. Doping In2Se3 nanowires with small amounts of Ga during synthesis can completely change the structural vacancy ordering from a layer-like to a screw-like pattern for (InxGa1-x)2Se3 nanowires. Lithium atoms can fill in the layer-like structural vacancies of In2Se3 nanowires and generate new types of vacancy and lithium atom ordering superlattices. The screw-patterned vacancies of (InxGa1-x)2Se3 nanowires show reversible lithium insertion. Our results contribute to the understanding of structure property correlations of III2VI3 materials used in lithium ion storage, photovoltaics, and phase change memory.
|Subjects:||Material Science > Nanostructured materials|
Material Science > Nanochemistry
|Divisions:||Faculty of Engineering, Science and Mathematics > School of Chemistry|
|Deposited On:||22 May 2009 13:53|
|Last Modified:||22 May 2009 13:53|
Repository Staff Only: item control page