Vassilevski, K V and Wright, N G and Nikitina, I P and Horsfall, A B and O'Neill, A G and Uren, M J and Hilton, K P and Masterton, A G and Hydes, A J and Johnson, C M (2005) Protection of selectively implanted and patterned silicon carbide surfaces with graphite capping layer during post-implantation annealing. Semiconductor Science and Technology, 20 (3). pp. 271-278.
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Official URL: http://stacks.iop.org/0268-1242/20/271
A graphite capping layer has been evaluated to protect the surface of patterned and selectively implanted 4H-SiC epitaxial wafers during post-implantation annealing. AZ-5214E photoresist was spun and baked in vacuum at temperatures ranging from 750 to 850 degC to form a continuous coating on both planar and mesa-etched SiC surfaces with features up to 2 um in height. Complete conversion of the hydrogenated polymer-like film into nanocrystalline graphite layer was verified by Raman spectroscopy. The graphite capping layer remained undamaged and protected both planar and mesa-etched SiC surfaces during subsequent annealing in argon ambient at temperatures up to 1650 degC for 30 min. It effectively suppressed step bunching and dopant out-diffusion in implanted regions and simultaneously ensured that the un-implanted surface of the 4H-SiC epitaxial wafer remained free of contamination. Schottky barrier diodes formed on the un-implanted annealed surfaces displayed almost ideal characteristics.
|Deposited By:||Prof. Alexey Ivanov|
|Deposited On:||06 Feb 2010 11:11|
|Last Modified:||06 Feb 2010 11:53|
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