Grekhov, Igor' V and Mesyats, Gennadii A (2005) Nanosecond semiconductor diodes for pulsed power switching. Physics-Uspekhi, 48 (7). pp. 703-712.
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Official URL: http://stacks.iop.org/1063-7869/48/703
The development of semiconductor-based nano- and subnanosecond high current breakers is crucial for advancing modern research in experimental physics and radioelectronics, particularly with increasing power (to 1010 W) and repetition rate (to 104 Hz) of impulse devices. Highlighted in this review are two types of silicon diodes: drift step recovery diodes (DSRDs) and SOS diodes with the attainable current densities and switched-off powers being 102 A cm−2 and 108 W in the former case, and 105 A cm−2 and 1010 W in the latter. The possibility of utilizing not only monocrystalline silicon (as in DSRDs and SOS diodes) for the base material but also monocrystalline silicon carbide is examined.
|Deposited By:||Prof. Alexey Ivanov|
|Deposited On:||06 Feb 2010 11:11|
|Last Modified:||06 Feb 2010 11:53|
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