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Quantum dots microstructure by XAFS spectroscopy: GaN/AlN system depending on preparation conditions

Erenburg, S B and Bausk, N V and Bausk, V E and Mansurov, V G and Toropov, I and Zhuravlev, K S and Bras, W and Nikitenko, S (2006) Quantum dots microstructure by XAFS spectroscopy: GaN/AlN system depending on preparation conditions. Journal of Physics: Conference Series, 41 . pp. 261-266.

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Official URL: http://stacks.iop.org/1742-6596/41/261

Abstract

GaK EXAFS spectra of GaN/AlN heterostructures were measured. Microstructure parameters of GaN/AlN heterosystems with discrete electronic spectra largely influenced by the elastic deformation at the boundaries of the nanoclusters and substrate was detected by the direct method. The local structure parameters determined by EXAFS spectroscopy are linked to preparation conditions and nanostructures morphology and adequate models are suggested and discussed.

Item Type:Article
ID Code:5408
Deposited By:Prof. Alexey Ivanov
Deposited On:06 Feb 2010 11:11
Last Modified:06 Feb 2010 11:53

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