Erenburg, S B and Bausk, N V and Bausk, V E and Mansurov, V G and Toropov, I and Zhuravlev, K S and Bras, W and Nikitenko, S (2006) Quantum dots microstructure by XAFS spectroscopy: GaN/AlN system depending on preparation conditions. Journal of Physics: Conference Series, 41 . pp. 261-266.
Full text is not hosted in this archive but may be available via the Official URL, or by requesting a copy from the corresponding author.
Official URL: http://stacks.iop.org/1742-6596/41/261
Abstract
GaK EXAFS spectra of GaN/AlN heterostructures were measured. Microstructure parameters of GaN/AlN heterosystems with discrete electronic spectra largely influenced by the elastic deformation at the boundaries of the nanoclusters and substrate was detected by the direct method. The local structure parameters determined by EXAFS spectroscopy are linked to preparation conditions and nanostructures morphology and adequate models are suggested and discussed.
| Item Type: | Article |
|---|---|
| ID Code: | 5408 |
| Deposited By: | Prof. Alexey Ivanov |
| Deposited On: | 06 Feb 2010 11:11 |
| Last Modified: | 06 Feb 2010 11:53 |
Repository Staff Only: item control page
