Erenburg, S B and Bausk, N V and Bausk, V E and Mansurov, V G and Toropov, I and Zhuravlev, K S and Bras, W and Nikitenko, S (2006) Quantum dots microstructure by XAFS spectroscopy: GaN/AlN system depending on preparation conditions. Journal of Physics: Conference Series, 41 . pp. 261-266.
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Official URL: http://stacks.iop.org/1742-6596/41/261
GaK EXAFS spectra of GaN/AlN heterostructures were measured. Microstructure parameters of GaN/AlN heterosystems with discrete electronic spectra largely influenced by the elastic deformation at the boundaries of the nanoclusters and substrate was detected by the direct method. The local structure parameters determined by EXAFS spectroscopy are linked to preparation conditions and nanostructures morphology and adequate models are suggested and discussed.
|Deposited By:||Prof. Alexey Ivanov|
|Deposited On:||06 Feb 2010 11:11|
|Last Modified:||06 Feb 2010 11:53|
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