Nano Archive

Raman scattering study of GaN nanostructures obtained by bottom-up and top-down approaches

Milekhin, A G and Meijers, R J and Richter, T and Calarco, R and Montanari, S and Luth, H and Sierra, B A Paez and Zahn, D R T (2006) Raman scattering study of GaN nanostructures obtained by bottom-up and top-down approaches. Journal of Physics: Condensed Matter, 18 (26). pp. 5825-5834.

Full text is not hosted in this archive but may be available via the Official URL, or by requesting a copy from the corresponding author.

Official URL: http://stacks.iop.org/0953-8984/18/5825

Abstract

GaN nanocolumnar structures were grown by plasma-assisted molecular beam epitaxy (PAMBE) and also fabricated by electron cyclotron resonance reactive ion etching (ECR-RIE) of a compact GaN film parallel to the [111] direction of the Si(111) substrates. Scanning electron microscopy shows that the nanocolumns fabricated by PAMBE have a length of about 300-500 nm with diameters ranging from 20 to 150 nm while nanowhiskers formed by RIE have diameters of 40-80 nm and a height between 1.4 and 1.7 um. A comparative study of the vibrational spectrum (including optical and interface phonons) of the nanostructures using conventional macro-Raman and micro-Raman scattering as well as surface-enhanced Raman scattering is presented.

Item Type:Article
ID Code:5391
Deposited By:Prof. Alexey Ivanov
Deposited On:06 Feb 2010 11:10
Last Modified:06 Feb 2010 11:53

Repository Staff Only: item control page