Shklyaev, Aleksandr A and Ichikawa, Masakazu (2006) Fabrication of germanium and silicon nanostructures using a scanning tunneling microscope. Physics-Uspekhi, 49 (9). pp. 887-903.
Full text is not hosted in this archive but may be available via the Official URL, or by requesting a copy from the corresponding author.
Official URL: http://stacks.iop.org/1063-7869/49/887
Abstract
The state of the art of research on the fabrication of semiconductor surface nanostructures using a scanning tunneling microscope (STM) is reviewed. The continuous atom transfer occurring due to directional surface diffusion initiated by the STM electric field and involving field-induced evaporation is analyzed. The effect of irradiation with an external electron beam on the tip-sample interaction is discussed, which consists in reducing the barrier for direct interatomic reactions and in changing the direction of the tip-sample atomic transfer. The possibilities of fabricating germanium and silicon nanostructures such as islands and lines and also making silicon windows on oxidized silicon surfaces are demonstrated.
| Item Type: | Article |
|---|---|
| ID Code: | 5377 |
| Deposited By: | Prof. Alexey Ivanov |
| Deposited On: | 06 Feb 2010 11:10 |
| Last Modified: | 06 Feb 2010 11:53 |
Repository Staff Only: item control page
