Ovid'ko, I A and Sheinerman, A G (2007) A new relaxation mechanism in nanoscale films. Journal of Physics: Condensed Matter, 19 (5). 056008 (9pp).
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Official URL: http://stacks.iop.org/0953-8984/19/056008
A new mechanism of stress relaxation in heteroepitaxial films of nanoscale thickness is suggested and theoretically described. The mechanism represents nucleation of a 'non-crystallographic' partial dislocation (at the film-substrate interface) whose Burgers vector magnitude continuously grows during the nucleation process. It is shown that the new mechanism effectively competes with the standard nucleation of a perfect misfit dislocation at the free surface of the film and its further glide towards the film-substrate interface.
|Deposited By:||Prof. Alexey Ivanov|
|Deposited On:||06 Feb 2010 11:10|
|Last Modified:||06 Feb 2010 11:53|
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