Nano Archive

Conduction regime in innovative carbon nanotube via interconnect architectures

Coiffic, J. C. and Fayolle, M and Maitrejean, S and Torres, L. E. F. Foa and Le Poche, H (2007) Conduction regime in innovative carbon nanotube via interconnect architectures. APPLIED PHYSICS LETTERS, 91 (25).

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We report on the electrical properties of multiwall carbon nanotube based via interconnects over a broad range of temperature and bias voltage. By using innovating processing techniques, high density nanotube vias have been fabricated from single damascene and double damascene via architectures with diameters down to 140 nm. For single damascene structures, resistances as low as 20 Omega have been achieved for 300 nm via size. Further measurements show that the conductance increases with temperature following an exponential law, which can be interpreted in terms of a disordered quasi-one dimensional conduction regime. (c) 2007 American Institute of Physics.

Item Type:Article
Subjects:Material Science > Functional and hybrid materials
Physical Science > Nano objects
Physical Science > Nanoelectronics
ID Code:533
Deposited By:IoN
Deposited On:20 Jan 2009 11:43
Last Modified:26 Mar 2009 14:28

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