Kazakov, I P and Kozlovskii, V I and Martovitskii, V P and Skasyrsky, Ya K and Popov, Yu M and Kuznetsov, P I and Yakushcheva, G G and Zabezhailov, A O and Dianov, E M (2007) A ZnSe/ZnMgSSe nanostructure for a laser electron-beam tube emitting in the blue spectral region. Quantum Electronics, 37 (9). pp. 857-862.
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Official URL: http://stacks.iop.org/1063-7818/37/857
The ZnMgSSe epitaxial layers and quantum-well ZnSe/ZnMgSSe nanostructures are grown by the methods of molecular-beam epitaxy and metal-organic vapour-phase epitaxy (MOVPE) on GaAs substrates. The dependences of their structural and luminescent properties on the content of Mg and S are studied. The decomposition of a solid ZnMgSSe solution into structural phases is found in samples with the energy gap larger than 2.9 eV at T = 300 K. The decomposition complicates the development of efficient lasers. It is shown that a high homogeneity of the crystal lattice of barrier ZnMgSSe layers can be obtained in periodic ZnSe/ZnMgSSe nanostructures grown by the MOVPE method at T430 °C. Based on these structures, a laser is fabricated which emits 1.5 W at 458 nm upon longitudinal pumping by 42-keV electrons at room temperature.
|Deposited By:||Prof. Alexey Ivanov|
|Deposited On:||06 Aug 2009 11:24|
|Last Modified:||06 Aug 2009 11:32|
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