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Improvement of the photon generation efficiency in phosphorus-doped silicon nanocrystals: Γ–X mixing of the confined electron states

Belyakov, V A and Belov, A I and Mikhaylov, A N and Tetelbaum, D I and Burdov, V A (2009) Improvement of the photon generation efficiency in phosphorus-doped silicon nanocrystals: Γ–X mixing of the confined electron states. Journal of Physics: Condensed Matter, 21 (4). 045803 (5pp).

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Official URL: http://stacks.iop.org/0953-8984/21/045803

Abstract

It has been shown that the central-cell potential of a phosphorus ion embedded in a silicon nanocrystal effectively mixes the electronic states of X- and Γ-bands. Quantum confinement strengthens the Γ–X mixing which, in turn, straightens the nanocrystal's band structure, and substantially intensifies interband radiative recombination.

Item Type:Article
ID Code:5150
Deposited By:Prof. Alexey Ivanov
Deposited On:05 Aug 2009 08:58
Last Modified:06 Aug 2009 11:31

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