Stepina, N P and Kirienko, V V and Dvurechenskii, A V and Alyamkin, S A and Armbrister, V A and Nenashev, A V (2009) Selective oxidation of poly-Si with embedded Ge nanocrystals in Si/SiO2/Ge(NCs)/poly-Si structure for memory device fabrication. Semiconductor Science and Technology, 24 (2). 025015 (4pp).
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Official URL: http://stacks.iop.org/0268-1242/24/025015
Selective oxidation of poly-Si in Si/SiO2/Ge(NCs)/poly-Si structure was proposed as the method of tunable synthesis of a control insulator in a memory device with Ge nanocrystals (NCs). Different behavior of oxidation resulting in partial and total oxidation of poly-Si was investigated using spectral ellipsometry and capacitance-voltage (CV) techniques. The [?]2.1 V memory window corresponding to the electron and hole charging/discharging processes in NCs was obtained in Si/SiO2/Ge(NCs)/SiO2 structure. To compare the experimental and calculated CV characteristics the energies of the electron and hole ground states were determined.
|Deposited By:||Prof. Alexey Ivanov|
|Deposited On:||05 Aug 2009 09:00|
|Last Modified:||06 Aug 2009 11:31|
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