Nano Archive

Interface analysis of HfO2 films on (1 0 0)Si using x-ray photoelectron spectroscopy

Sokolov, A A and Filatova, E O and Afanas'ev, V V and Taracheva, E Yu and Brzhezinskaya, M M and Ovchinnikov, A A (2009) Interface analysis of HfO2 films on (1 0 0)Si using x-ray photoelectron spectroscopy. Journal of Physics D: Applied Physics, 42 (3). 035308 (6pp).

Full text is not hosted in this archive but may be available via the Official URL, or by requesting a copy from the corresponding author.

Official URL: http://stacks.iop.org/0022-3727/42/035308

Abstract

Thin layers of HfO2 grown on the (1 0 0)Si crystal surface using atomic layer deposition or metallo-organic chemical vapour deposition were analysed using x-ray photoelectron spectroscopy (XPS) of Hf 4f, Si 2p and O 1s electron states. The chemical indepth profiling was conducted by combining XPS with Ar+ ion sputtering. In addition to establishing the deposition-sensitive oxide structure, Ar+ ion sputtering was found to lead to the formation of a metallic Hf layer on the surface of the sample. The latter observation suggests HfO2 as a feasible candidate for not only insulating applications but, thanks to the high mass and electron density of the cation, also as a material suitable for the fabrication of nanometre-sized conductors by direct oxide decomposition.

Item Type:Article
ID Code:5138
Deposited By:Prof. Alexey Ivanov
Deposited On:05 Aug 2009 09:02
Last Modified:06 Aug 2009 11:31

Repository Staff Only: item control page