Sokolov, A A and Filatova, E O and Afanas'ev, V V and Taracheva, E Yu and Brzhezinskaya, M M and Ovchinnikov, A A (2009) Interface analysis of HfO2 films on (1 0 0)Si using x-ray photoelectron spectroscopy. Journal of Physics D: Applied Physics, 42 (3). 035308 (6pp).
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Official URL: http://stacks.iop.org/0022-3727/42/035308
Thin layers of HfO2 grown on the (1 0 0)Si crystal surface using atomic layer deposition or metallo-organic chemical vapour deposition were analysed using x-ray photoelectron spectroscopy (XPS) of Hf 4f, Si 2p and O 1s electron states. The chemical indepth profiling was conducted by combining XPS with Ar+ ion sputtering. In addition to establishing the deposition-sensitive oxide structure, Ar+ ion sputtering was found to lead to the formation of a metallic Hf layer on the surface of the sample. The latter observation suggests HfO2 as a feasible candidate for not only insulating applications but, thanks to the high mass and electron density of the cation, also as a material suitable for the fabrication of nanometre-sized conductors by direct oxide decomposition.
|Deposited By:||Prof. Alexey Ivanov|
|Deposited On:||05 Aug 2009 09:02|
|Last Modified:||06 Aug 2009 11:31|
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