Antonova, I V and Cherkov, A G and Skuratov, V A and Kagan, M S and Jedrzejewski, J and Balberg, I (2009) Low-dimensional effects in a three-dimensional system of Si quantum dots modified by high-energy ion irradiation. Nanotechnology, 20 (18). 185401 (5pp).
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Official URL: http://stacks.iop.org/0957-4484/20/185401
Modification of films containing Si nanocrystallites embedded in SiO2 by irradiation with high-energy ions was found to induce peaks in their low-frequency capacitance-voltage characteristics. Considering the nanocrystallite spatial distribution that follows the ion tracks we interpret these peaks as due to the charge transfer along these tracks, similar to the process that was reported previously for two-dimensional arrays of such crystallites. The ion irradiation of the above three-dimensional system appears to be useful then for the fabrication of nanostructures, which have also the properties of low-dimensional arrays.
|Deposited By:||Prof. Alexey Ivanov|
|Deposited On:||09 May 2009 00:21|
|Last Modified:||09 May 2009 00:21|
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