Peng, Hailin and Zhang, Xiao Feng and Twesten, Ray D. and Cui, Yi (2009) Vacancy ordering and lithium insertion in III2VI3 nanowires. Nano Research, 2 (4). pp. 327-335.
Superlattice structures resulting from vacancy ordering have been observed in many materials. Here we report vacancy ordering behavior in III2VI3 nanowires. The formation of layer-like structural vacancies has been achieved during the synthesis of In2Se3 nanowires through a vapor-transport route. Doping In2Se3 nanowires with small amounts of Ga during synthesis can completely change the structural vacancy ordering from a layer-like to a screw-like pattern for (Inx Ga1−x )2Se3 nanowires. Lithium atoms can fill in the layer-like structural vacancies of In2Se3 nanowires and generate new types of vacancy and lithium atom ordering superlattices. The screw-patterned vacancies of (Inx Ga1−x )2Se3 nanowires show reversible lithium insertion. Our results contribute to the understanding of structure property correlations of III2VI3 materials used in lithium ion storage, photovoltaics, and phase change memory.
|Subjects:||Material Science > Nanofabrication processes and tools|
|Deposited On:||17 Aug 2010 15:28|
|Last Modified:||18 Aug 2010 13:26|
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