Adarsh, K. V. and Sangunni, K. S. and Shripathi, T. and Kokenyesi, S. (2006) Photoinduced interdiffusion in nanolayered Se/As2S3 films: Optical and x-ray photoelectron spectroscopic studies. Journal for Applied Physics, 99 . 094301.
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Photoinduced interdiffusion was observed with above band gap light in nanolayered Se/As2S3 films. It is discussed in terms of the optical parameters such as band gap, Urbach edge (Ee) [F. Urbach, Phys. Rev. 92, 1324 (1953)], and B1/2 (Tauc's parameter) [J. Tauc et al., Phys. Status Solidi 15, 627 (1966)]. Experimental data of B1/2 and Ee for as-prepared samples do not show clear correlation implied by the Mott-Davis model [N. F. Mott and E. A. Davis, Electronic Process in Non-crystalline Materials (Clarendon, Oxford 1979), p. 287]. It is also shown that the optical parameters can be changed with a change in the Se sublayer thickness. Variations of these optical parameters as a function of modulation period and photoinduced interdiffusion were discussed in terms of the quantum confinement effect and changes in the valence and conduction bands. We proposed a model to explain the mechanism of Se diffusion in As2S3, which suggests that diffusion takes place through the wrong bonds. X-ray photoelectron spectroscopy (XPS) is used to investigate the chemical alternations in the bonding. The proposed model was supported by the XPS data.
|Subjects:||Physical Science > Nanophysics|
Physical Science > Nano objects
Material Science > Nanochemistry
Material Science > Nanostructured materials
|Divisions:||Faculty of Engineering, Science and Mathematics > School of Physics|
Faculty of Engineering, Science and Mathematics > School of Chemistry
|Deposited On:||27 May 2009 11:02|
|Last Modified:||27 May 2009 11:02|
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