Xiong, Jijun and Zhang, Wendong and Mao, Haiyang and Wang, Kaiqun (2009) Research on double-barrier resonant tunneling effect based stress measurement methods. Sensors and Actuators A: Physical, 150 (2). 169 - 174.
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Official URL: http://www.sciencedirect.com/science/article/B6THG...
Abstract
Piezoresistive effect of semiconductor materials is often used in microsensors as a sensing principle. Resonant tunneling diodes (RTDs) have been proved to have negative differential resistance effect, and their current–voltage characteristics change as a function of stress, which can be generated by external mechanical loads, such as pressures, accelerations and so on. According to this, the Meso-piezoresistive effect of RTDs can be used for stress measurement. This paper discusses two double-barrier resonant tunneling effect based stress measurement methods, including an RTD-Wheatstone bridge based method originally proposed. According to the results from the RTD-Wheatstone bridge based experiment, the piezoresistive sensitivity of RTD is adjustable in a range of 3 orders. And the largest piezoresistive sensitivity of RTD is larger than that of common semiconductor materials, such as silicon and GaAs.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Piezoresistive sensitivity; Stress measurement; Oscillation frequency; Resonant tunneling effect |
| Subjects: | Analytical Science > Nanotechnology for sensing and actuating Material Science > Nanostructured materials |
| ID Code: | 4962 |
| Deposited By: | SPI |
| Deposited On: | 09 Apr 2009 11:59 |
| Last Modified: | 09 Apr 2009 11:59 |
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