Okur, S and Yakuphanoglu, F (2009) Analysis of interface states of the pentacene organic thin-film phototransistor by conductance technique. Sensors and Actuators A: Physical, 149 (2). 241 - 245.
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Official URL: http://www.sciencedirect.com/science/article/B6THG...
A pentacene thin-film transistor with a channel width of 300 μm and a channel length of 30 μm has been successfully fabricated on n-Si substrate with thermally oxidized SiO2 as a gate insulator. The photovoltaic and interface state density properties of the transistor have been investigated. A pentacene film of 200 nm thickness was deposited on the SiO2 layer with a vacuum thermal evaporator. Atomic force microscopy images of the pentacene film on SiO2 insulating layer show a homogeneous film surface with the rms roughness of 11 nm. The transistor shows p-channel characteristics, as a result of positive carriers generated in the pentacene film for the negative bias voltages applied to the gate. The photosensitivity (Iph/Idark) is measured as 1.45 at an illumination intensity of 3500 lux at the off state. This suggests that the pentacene thin-film transistor shows a phototransistor characteristic. The field-effect mobility of the pentacene OTFT was found to be 0.021 cm2/(V s). The interface state density of the transistor was determined using conductance technique and was found to be about 1.191 × 1010 eV−1 cm−2.
|Uncontrolled Keywords:||Organic semiconductor; Thin-film transistor; Interface state density|
|Subjects:||Analytical Science > Nanotechnology for sensing and actuating|
|Deposited On:||09 Apr 2009 12:33|
|Last Modified:||09 Apr 2009 12:33|
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