Gibbons, F and Zaid, Hasnah M. and Manickam, Mayandithevar and Preece, Jon A. and Palmer, Richard E. and Robinson, Alex P. G. (2007) A chemically amplified fullerene-derivative molecular electron-beam resist. SMALL, 3 (12). pp. 2076-2080.
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Official URL: http://www3.interscience.wiley.com/journal/1168441...
Current lithographic resists depend on large polymeric materials, which are starting to limit further improvements in line-width roughness and feature size. Fullerene molecular resists use much smaller molecules to avoid this problem. However, such resists have poor radiation sensitivity. Chemical amplification of a fullerene derivative using an epoxy crosslinker and a photoacid generator is demonstrated. The sensitivity the material is increased by two orders of magnitude, and 20-nm line widths are patterned.
|Uncontrolled Keywords:||chemical amplification; electron beams; fullerenes; lithography; resists|
|Subjects:||Material Science > Nanofabrication processes and tools|
Material Science > Nanostructured materials
Analytical Science > Beam methods
|Deposited By:||INVALID USER|
|Deposited On:||04 Dec 2008 13:57|
|Last Modified:||02 Mar 2009 15:51|
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