Nano Archive

A chemically amplified fullerene-derivative molecular electron-beam resist

Gibbons, F and Zaid, Hasnah M. and Manickam, Mayandithevar and Preece, Jon A. and Palmer, Richard E. and Robinson, Alex P. G. (2007) A chemically amplified fullerene-derivative molecular electron-beam resist. SMALL, 3 (12). pp. 2076-2080.

Full text is not hosted in this archive but may be available via the Official URL, or by requesting a copy from the corresponding author.

Official URL:


Current lithographic resists depend on large polymeric materials, which are starting to limit further improvements in line-width roughness and feature size. Fullerene molecular resists use much smaller molecules to avoid this problem. However, such resists have poor radiation sensitivity. Chemical amplification of a fullerene derivative using an epoxy crosslinker and a photoacid generator is demonstrated. The sensitivity the material is increased by two orders of magnitude, and 20-nm line widths are patterned.

Item Type:Article
Uncontrolled Keywords:chemical amplification; electron beams; fullerenes; lithography; resists
Subjects:Material Science > Nanofabrication processes and tools
Material Science > Nanostructured materials
Analytical Science > Beam methods
ID Code:493
Deposited On:04 Dec 2008 13:57
Last Modified:02 Mar 2009 15:51

Repository Staff Only: item control page