Kim, Yong-Kook and Kim, Eun-Kyung and Kim, Soo-Won and Ju, Byeong-Kwon (2008) Low temperature epoxy bonding for wafer level MEMS packaging. Sensors and Actuators A: Physical, 143 (2). 323 - 328.
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Official URL: http://www.sciencedirect.com/science/article/B6THG...
In this paper, we report on a technology for wafer-level MEMS packaging with vertical via holes and low temperature bonding using a patternable B stage epoxy. We fabricated via holes for vertical feed-throughs and then applied bottom-up copper electroplating to fill the via holes. For low temperature wafer level packaging, we used B-stage epoxy bonding in the sealing line. The optimal bonding parameters were 150 °C and 30 min. The tensile strength was about 15 MPa. Therefore, this packaging technology can be used for low temperature wafer level packaging for many MEMS devices.
|Uncontrolled Keywords:||Microelectromechanical system (MEMS); Epoxy bonding; Wafer level packaging; Cu via; Low temperature|
|Subjects:||Analytical Science > Nanotechnology for sensing and actuating|
Engineering > Nanotechnology applications in ICT
|Deposited On:||09 Apr 2009 18:29|
|Last Modified:||09 Apr 2009 18:29|
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