Nano Archive

Low temperature epoxy bonding for wafer level MEMS packaging

Kim, Yong-Kook and Kim, Eun-Kyung and Kim, Soo-Won and Ju, Byeong-Kwon (2008) Low temperature epoxy bonding for wafer level MEMS packaging. Sensors and Actuators A: Physical, 143 (2). 323 - 328.

Full text is not hosted in this archive but may be available via the Official URL, or by requesting a copy from the corresponding author.

Official URL:


In this paper, we report on a technology for wafer-level MEMS packaging with vertical via holes and low temperature bonding using a patternable B stage epoxy. We fabricated via holes for vertical feed-throughs and then applied bottom-up copper electroplating to fill the via holes. For low temperature wafer level packaging, we used B-stage epoxy bonding in the sealing line. The optimal bonding parameters were 150 °C and 30 min. The tensile strength was about 15 MPa. Therefore, this packaging technology can be used for low temperature wafer level packaging for many MEMS devices.

Item Type:Article
Uncontrolled Keywords:Microelectromechanical system (MEMS); Epoxy bonding; Wafer level packaging; Cu via; Low temperature
Subjects:Analytical Science > Nanotechnology for sensing and actuating
Engineering > Nanotechnology applications in ICT
ID Code:4908
Deposited By:SPI
Deposited On:09 Apr 2009 18:29
Last Modified:09 Apr 2009 18:29

Repository Staff Only: item control page