Lam, K. T. and Chang, P. C. and Chang, S. J. and Yu, C. L. and Lin, Y. C. and Sun, Y. X. and Chen, C. H. (2008) Nitride-based photodetectors with unactivated Mg-doped GaN cap layer. Sensors and Actuators A: Physical, 143 (2). 191 - 195.
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Official URL: http://www.sciencedirect.com/science/article/B6THG...
Abstract
Nitride-based MIS-like photodetectors with in situ grown 30 nm thick unactivated semi-insulating Mg-doped GaN cap layers were fabricated. It was found that the reverse leakage current of aforementioned photodetector was comparably much smaller than that of conventional photodetector without the semi-insulating layer, due to the facts that inserting a semi-insulating layer would result in a thicker and higher potential barrier. We could also improve the ultraviolet to visible rejection ratio by inserting a semi-insulating Mg-doped GaN cap layer. To sum up, we have determined that the benefits of incorporating a semi-insulating Mg-doped GaN cap layer into the photodetector would encompass larger effective Schottky barrier height, and larger ultraviolet to visible rejection ratio
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | MOCVD; Mg-doped GaN; Semi-insulating; Cap layer |
| Subjects: | Analytical Science > Nanotechnology for sensing and actuating Technology > Nanotechnology and energy applications Material Science > Nanostructured materials |
| ID Code: | 4904 |
| Deposited By: | SPI |
| Deposited On: | 09 Apr 2009 18:40 |
| Last Modified: | 09 Apr 2009 18:40 |
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