Nano Archive

Nitride-based photodetectors with unactivated Mg-doped GaN cap layer

Lam, K. T. and Chang, P. C. and Chang, S. J. and Yu, C. L. and Lin, Y. C. and Sun, Y. X. and Chen, C. H. (2008) Nitride-based photodetectors with unactivated Mg-doped GaN cap layer. Sensors and Actuators A: Physical, 143 (2). 191 - 195.

Full text is not hosted in this archive but may be available via the Official URL, or by requesting a copy from the corresponding author.

Official URL: http://www.sciencedirect.com/science/article/B6THG...

Abstract

Nitride-based MIS-like photodetectors with in situ grown 30 nm thick unactivated semi-insulating Mg-doped GaN cap layers were fabricated. It was found that the reverse leakage current of aforementioned photodetector was comparably much smaller than that of conventional photodetector without the semi-insulating layer, due to the facts that inserting a semi-insulating layer would result in a thicker and higher potential barrier. We could also improve the ultraviolet to visible rejection ratio by inserting a semi-insulating Mg-doped GaN cap layer. To sum up, we have determined that the benefits of incorporating a semi-insulating Mg-doped GaN cap layer into the photodetector would encompass larger effective Schottky barrier height, and larger ultraviolet to visible rejection ratio

Item Type:Article
Uncontrolled Keywords:MOCVD; Mg-doped GaN; Semi-insulating; Cap layer
Subjects:Analytical Science > Nanotechnology for sensing and actuating
Technology > Nanotechnology and energy applications
Material Science > Nanostructured materials
ID Code:4904
Deposited By:SPI
Deposited On:09 Apr 2009 18:40
Last Modified:09 Apr 2009 18:40

Repository Staff Only: item control page