Young, S. J. and Ji, L. W. and Chang, S. J. and Liang, S. H. and Lam, K. T. and Fang, T. H. and Chen, K. J. and Du, X. L. and Xue, Q. K. (2008) ZnO-based MIS photodetectors. Sensors and Actuators A: Physical, 141 (1). 225 - 229.
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Official URL: http://www.sciencedirect.com/science/article/B6THG...
Abstract
We report the fabrication of ZnO-based metal–insulator–semiconductor (MIS) and metal–semiconductor–metal (MSM) photodetectors. With 5 V applied bias, it was found that photocurrent to dark current contrast ratios of the ZnO MSM and MIS photodetectors were 2.9 × 102 and 3.2 × 104, respectively. It was also found that measured responsivities were 0.089 and 0.0083 A/W for the ZnO MSM and MIS photodetectors, respectively, when the incident light wavelength was 370 nm. Furthermore, it was found that UV to visible rejection ratios for the fabricated ZnO MSM and MIS photodetectors were 2.4 × 102 and 3.8 × 103, respectively.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | ZnO; Semiconducting II–VI materials; Photodiodes |
| Subjects: | Material Science > Nanofabrication processes and tools Analytical Science > Nanotechnology for sensing and actuating Technology > Nanotechnology and energy applications Material Science > Nanostructured materials |
| ID Code: | 4902 |
| Deposited By: | SPI |
| Deposited On: | 09 Apr 2009 18:49 |
| Last Modified: | 09 Apr 2009 18:49 |
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