Nano Archive

ZnO-based MIS photodetectors

Young, S. J. and Ji, L. W. and Chang, S. J. and Liang, S. H. and Lam, K. T. and Fang, T. H. and Chen, K. J. and Du, X. L. and Xue, Q. K. (2008) ZnO-based MIS photodetectors. Sensors and Actuators A: Physical, 141 (1). 225 - 229.

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We report the fabrication of ZnO-based metal–insulator–semiconductor (MIS) and metal–semiconductor–metal (MSM) photodetectors. With 5 V applied bias, it was found that photocurrent to dark current contrast ratios of the ZnO MSM and MIS photodetectors were 2.9 × 102 and 3.2 × 104, respectively. It was also found that measured responsivities were 0.089 and 0.0083 A/W for the ZnO MSM and MIS photodetectors, respectively, when the incident light wavelength was 370 nm. Furthermore, it was found that UV to visible rejection ratios for the fabricated ZnO MSM and MIS photodetectors were 2.4 × 102 and 3.8 × 103, respectively.

Item Type:Article
Uncontrolled Keywords:ZnO; Semiconducting II–VI materials; Photodiodes
Subjects:Material Science > Nanofabrication processes and tools
Analytical Science > Nanotechnology for sensing and actuating
Technology > Nanotechnology and energy applications
Material Science > Nanostructured materials
ID Code:4902
Deposited By:SPI
Deposited On:09 Apr 2009 18:49
Last Modified:09 Apr 2009 18:49

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