Nano Archive

Surface potential imaging in oxide-nitride-oxide-silicon structure using a field effect transistor cantilever

Suh, M. S. and Lee, C. S. and Kim, S. H. and Lee, K. I. and Cho, J. W. and Kuk, Y and Shin, J. K. (2007) Surface potential imaging in oxide-nitride-oxide-silicon structure using a field effect transistor cantilever. Sensors and Actuators A: Physical, 136 (2). 597 - 603.

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Official URL: http://www.sciencedirect.com/science/article/B6THG...

Abstract

To verify the application of the new atomic force microscopy (AFM) cantilever with field effect transistor (FET) structure, the images of the surface potential in the silicon dioxide (SiO2)-silicon nitride (SiN)-silicon dioxide-silicon (ONOS) structure were examined in this study. The images were obtained under the continuous application of dc bias and short time in the contact-mode AFM. And the FET cantilever was not affected by external parameters, such as moisture and temperature. The duration of the charge confinement in this study was shorter than those in previous studies because the SiN layer was very thin, measuring less than 5 nm. The retention time of the surface potential in the ONOS structure was achieved above 2 h at high voltage applied to the gate. The retention time, however, was about 1 h at low-voltage conditions.

Item Type:Article
Additional Information:Micromechanics Section of Sensors and Actuators, Based on Contributions revised from the Technical Digest of the 2006 Solid-State Sensor, Actuator and Microsytems Workshop
Uncontrolled Keywords:Field effect transistor (FET); Cantilever; AFM; Charge sensing
Subjects:Analytical Science > Nanotechnology for sensing and actuating
ID Code:4835
Deposited By:SPI
Deposited On:28 Apr 2009 10:37
Last Modified:28 Apr 2009 10:37

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