Nano Archive

Fabrication and characterization of ZnO nanowires based UV photodiodes

Luo, Lei and Zhang, Yanfeng and Mao, Samuel S. and Lin, Liwei (2006) Fabrication and characterization of ZnO nanowires based UV photodiodes. Sensors and Actuators A: Physical, 127 (2). 201 - 206.

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A heterojunction of n-type zinc oxide (ZnO) nanowires and p-type silicon has been successfully constructed to demonstrate ultraviolet (UV) photodiodes. The prototype device consists of naturally doped n-type ZnO nanowires grown on top of a (1 0 0) p-silicon substrate by the bottom-up growth process. The diameter of the nanowires is in the range of 70–120 nm, and the length is controlled by the growth time. The isolation is achieved by using spin-on glass (SOG) that also works as the foundation of the top electrode. The current–voltage (I–V) characteristics show the typical rectifying behavior of heterojunctions, and the photodiode exhibits response of 0.07 A/W for UV light (365 nm) under a 20 V reverse bias.

Item Type:Article
Additional Information:MEMS 2005 Special Issue - Special Issue of the Micromechanics Section of Sensors and Actuators (SAMM), based on contributions revised from the technical digest of the IEEE 18th International Conference on Micro Electro Mechanical Systems (MEMS-2005).
Uncontrolled Keywords:ZnO nanowires; UV light; Photodiodes
Subjects:Analytical Science > Nanotechnology for sensing and actuating
Material Science > Nanostructured materials
ID Code:4731
Deposited By:SPI
Deposited On:30 Jun 2009 16:19
Last Modified:30 Jun 2009 16:19

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