Nano Archive

Formation of nanooctahedra in molybdenum disulfide and molybdenum diselenide using pulsed laser vaporization.

Parilla, Philip A. and Dillon, Anne C. and Parkinson, Bruce A. and Jones, Kim M. and Alleman, Jeff and Riker, Gerald and Ginley, David S. and Heben, Michael J. (2004) Formation of nanooctahedra in molybdenum disulfide and molybdenum diselenide using pulsed laser vaporization. The journal of physical chemistry. B, 108 (20). pp. 6197-207. ISSN 1520-6106

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Official URL: http://pubs.acs.org/doi/pdf/10.1021/jp036202%2B

Abstract

Pulsed laser vaporization has been used to produce nanooctahedra of MoS2 and MoSe2. The nanooctahedra primarily form in two- or three-layer nested octahedra, although nesting up to five layers has been observed. Tilting the TEM sample stage and mapping how the images of single particles transformed provided the evidence to verify their octahedral geometry. Analysis of 30 two- and three-layered octahedra showed that their outer edge lengths clustered at approximately 3.8 nm and approximately 5.1 nm, respectively. This discreet sizing and the high symmetry of these closed nanooctahedra represent the closest inorganic analogy yet to the carbon fullerenes. The geometrical implications for forming octahedra from these layered compounds are investigated by considering different atomic arrangements assuming either trigonal prismatic or octahedral coordination around the Mo atom and yields two possible configurations for the actual structure of the nanooctahedra. A preliminary survey of pulsed laser vaporization of other layered metal chalcogenides shows that these dichalcogenides differ in their tendency to form small closed layered fullerene-like structures. These materials can be ranked from highest tendency to lowest as follows: NbSe2, WS2, WSe2, SnS2, TaS2, GaS, ReS2, and MoTe2.

Item Type:Article
Subjects:Material Science > Nanofabrication processes and tools
Material Science > Nanostructured materials
ID Code:47
Deposited By:Lesley Tobin
Deposited On:06 Jan 2009 16:06
Last Modified:19 Feb 2009 17:35

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