Luo, Lei and Zhang, Yanfeng and Mao, Samuel S. and Lin, Liwei (2006) Fabrication and characterization of ZnO nanowires based UV photodiodes. Sensors and Actuators A: Physical, 127 (2). 201 - 206.
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Official URL: http://www.sciencedirect.com/science/article/B6THG...
A heterojunction of n-type zinc oxide (ZnO) nanowires and p-type silicon has been successfully constructed to demonstrate ultraviolet (UV) photodiodes. The prototype device consists of naturally doped n-type ZnO nanowires grown on top of a (1 0 0) p-silicon substrate by the bottom-up growth process. The diameter of the nanowires is in the range of 70–120 nm, and the length is controlled by the growth time. The isolation is achieved by using spin-on glass (SOG) that also works as the foundation of the top electrode. The current–voltage (I–V) characteristics show the typical rectifying behavior of heterojunctions, and the photodiode exhibits response of 0.07 A/W for UV light (365 nm) under a 20 V reverse bias.
|Additional Information:||MEMS 2005 Special Issue - Special Issue of the Micromechanics Section of Sensors and Actuators (SAMM), based on contributions revised from the technical digest of the IEEE 18th International Conference on Micro Electro Mechanical Systems (MEMS-2005).|
|Uncontrolled Keywords:||ZnO nanowires; UV light; Photodiodes|
|Subjects:||Analytical Science > Nanotechnology for sensing and actuating|
|Deposited On:||08 Apr 2009 12:58|
|Last Modified:||08 Apr 2009 12:58|
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