Bae, Sang-Woo and Park, Hyung-Ho and Kim, Tae-Song (2006) Ferroelectric properties of direct-patterned half-micron thick PZT film. Sensors and Actuators A: Physical, 125 (2). 548 - 552.
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Official URL: http://www.sciencedirect.com/science/article/B6THG...
Ferroelectric properties of direct-patterned PZT(PbZr0.52Ti0.48O3) films with 460 μm × 460 μm size and 510 nm thick were analyzed for applying to micro-detecting devices. A photosensitive solution containing ortho-nitrobenzaldehyde was used for the preparation of direct-patterned PZT film. PZT solution was coated on Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrate for three times to obtain half-micron thick film and three times of direct-patterning process were repeated to define a pattern on multi-layer PZT film. Through intermediate and final anneal procedure of direct-patterned PZT film, any shrinkage along horizontal direction was not observed within this experimental condition, i.e., the size of the pattern was preserved after annealing, only a thickness reduction was observed after each annealing treatment. Ferroelectric properties of direct-patterned PZT film with 460 μm × 460 μm size and 510 nm thick were compared with those of un-patterned conventional PZT film and shown to be almost the same. Through this work, the high potentiality of direct-patternable PZT film for applying to micro-devices without the introduction of physical damages from dry-etching could be confirmed.
|Uncontrolled Keywords:||Photoresist-free; Direct-patterning; PZT; Ferroelectric; Multi-layer film|
|Subjects:||Analytical Science > Nanotechnology for sensing and actuating|
|Deposited On:||08 Apr 2009 15:23|
|Last Modified:||08 Apr 2009 15:23|
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