Simulation of SiO2-based piezoresistive microcantilevers

Abstract

This article uses finite element design for optimization of piezoresistive Si covered SiO2 microcantilevers. The maximum resistance changes were systematically investigated by varying piezoresistor geometries and doping concentration. Our simulation results show that both cantilever deflection displacement and ΔR/R change decrease when the thickness of piezoresistors increases; the highest sensitivity can be obtained when the piezoresistor length is approximately 2/5 of the SiO2 cantilever length; increase of both Si width and leg width result in decrease in cantilever deflection and sensitivity; the sensitivity of cantilevers with lower doping concentrations is more significant than those with higher doping concentrations. Temperature control is critical for thin piezoresistor in lowering the S/N ratio and increasing the sensitivity.