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Improvement in smoothness of anisotropically etched silicon surfaces: Effects of surfactant and TMAH concentrations

Cheng, Di and Gosálvez, Miguel A. and Hori, Tatsuya and Sato, Kazuo and Shikida, Mitsuhiro (2006) Improvement in smoothness of anisotropically etched silicon surfaces: Effects of surfactant and TMAH concentrations. Sensors and Actuators A: Physical, 125 (2). 415 - 421.

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Official URL: http://www.sciencedirect.com/science/article/B6THG...

Abstract

We investigated the anisotropic etching properties of single-crystal silicon using tetramethyl-ammonium-hydroxide (TMAH) water solutions containing poly-oxethylene-alkyl-phenyl-ether (NC-200) as a surfactant. When the surfactant was added at 0.1% of the total volume of the etchant, the etched surface morphologies drastically changed, along with the anisotropy of the etching rate. We found that by using the surfactant at the low TMAH concentration region, a smooth mirror-like surface can be etched in both (1 0 0) and (1 1 0) orientations simultaneously. Although the addition of the surfactant reduces the etching rate, we show how this procedure can be used to improve the roughness of an etched surface without significantly increasing the overall processing time.

Item Type:Article
Uncontrolled Keywords:Anisotropic etching; Single-crystal silicon; TMAH; Surfacant NC-200; Etched surface roughness
Subjects:Material Science > Nanofabrication processes and tools
Analytical Science > Nanotechnology for sensing and actuating
Engineering > Nanotechnology applications in ICT
ID Code:4666
Deposited By:SPI
Deposited On:08 Apr 2009 17:13
Last Modified:08 Apr 2009 17:13

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