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Hydrogen termination for the growth of carbon nanotubes on silicon

Tuyen, Le Thi Trong and Minh, Phan Ngoc and Roduner, Emil and Chi, Pham Thi Duong and Ono, Takahito and Miyashita, Hidetoshi and Khoi, Phan Hong and Esashi, Masayoshi (2005) Hydrogen termination for the growth of carbon nanotubes on silicon. Chemical Physics Letters, 415 . pp. 333-336.

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Vertically aligned carbon nanotubes (CNTs) are grown on Fe-covered nano-structured Si tip apexes and planar Si substrates. Under the similar condition of a hot wire filament chemical vapor deposition technique, the growth and adhesion behaviors of the CNTs strongly depend on the chemical treatment of the Si surfaces, which determines the predominant chemical terminations. The Si substrates are terminated by hydrogen, or covered by a native oxide layer, or treated with tetramethyl ammonium hydroxide. The former provides an extremely strong adhesion, presumably due to the formation of Si–C direct bonds created in the initial stage of the CNT growth process, whereas the latter adheres poorly, and the third not at all, as revealed by images of scanning and transmission electron microscopy. A related concept of the CNT growth is suggested.

Item Type:Article
Subjects:Physical Science > Nanophysics
ID Code:4615
Deposited By:CSMNT
Deposited On:09 Apr 2009 03:10
Last Modified:09 Apr 2009 03:10

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