Iacopi, F and Vereecken, P. M. and Schaekers, M and Caymax, M and Moelans, N and Blanpain, B and Richard, O and Detavernier, C and Griffiths, H (2007) Plasma-enhanced chemical vapour deposition growth of Si nanowires with low melting point metal catalysts: an effective alternative to Au-mediated growth. NANOTECHNOLOGY, 18 (50).
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Official URL: http://www.iop.org/EJ/abstract/0957-4484/18/50/505...
Au nanoparticles are efficient catalysts for the vapour-solid-liquid (VLS) growth of semiconductor nanowires, but Au poses fundamental reliability concerns for applications in Si semiconductor technology. In this work we show that the choice of catalysts for Si nanowire growth can be broadened when the need for catalytic precursor dissociation is eliminated through the use of plasma enhancement. However, in this regime the incubation time for the activation of VLS growth must be minimized to avoid burying the catalyst particles underneath an amorphous Si layer. We show that the combined use of plasma enhancement and the use of a catalyst such as In, already in a liquid form at the growth temperature, is a powerful method for obtaining Si nanowire growth with high yield. Si nanowires grown by this method are monocrystalline and generally oriented in the < 1 1 1 > direction.
|Subjects:||Material Science > Nanofabrication processes and tools|
Physical Science > Nano objects
|Deposited By:||Farnush Anwar|
|Deposited On:||03 Dec 2008 14:39|
|Last Modified:||12 Feb 2009 17:49|
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