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Blueshift of electroluminescence from single n-InP nanowire/p-Si heterojunctions due to the Burstein–Moss effect

Liu, C and Dai, Lun and You, L. P. and Xu, W. J. and Qin, G. G. (2008) Blueshift of electroluminescence from single n-InP nanowire/p-Si heterojunctions due to the Burstein–Moss effect. Nanotechnology , 19 (465203 (5pp)).

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Abstract

Single-crystalline n-type InP nanowires (NWs) with different electron concentrations were synthesized on Si substrates via the vapor phase transport method. The electrical properties of the InP nanowires were investigated by fabricating and measuring single NW field-effect transistors (FETs). Single InP NW/p+-Si heterojunctions were fabricated, and electroluminescence (EL) spectra from them were studied. It was found that both the photoluminescence (PL) spectra of the InP NWs and the EL spectra of the heterojunctions blueshift from 920 to 775 nm when the electron concentrations of the InP NWs increase from 2× 1017 to 1.4 × 1019 cm−3. The blueshifts can be attributed to the Burstein–Moss effect rather than the quantum confinement effect in the InP NWs. The large blueshifts observed in this study indicate a potential application of InP NWs in nano-multicolour displays.

Item Type:Article
Subjects:Technology > Nanotechnology and energy applications
ID Code:4565
Deposited By:CSMNT
Deposited On:08 Apr 2009 02:50
Last Modified:08 Apr 2009 02:50

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