Chuah, L. S. and Hassan, Z and Hassan, H. Abu (2009) Optical characterization of nanoporous GaN Through Electroless Wet Chemical Etching. Nano-Optoelectronics Research and Technology .
This is the latest version of this item.
Full text is not hosted in this archive but may be available via the Official URL, or by requesting a copy from the corresponding author.
High quality unintentionally doped n-type GaN layers were grown on Si(111) substrate using AlN as buffer layer by radio frequency (RF) nitrogen molecular beam epitaxy (MBE). Present work reports on the photoluminescence (PL) studies of porous GaN prepared by ultra-violet (UV) assisted electrochemical etching in a solution of 2:1:1 HF:CH3OH:H2O2 under illumination of an UV lamp with 500 W power for 10, 25 and 35 minutes. The optical properties of porous GaN sample were compared to the corresponding as grown GaN. PL studies suggested that the porosity was capable of improving the lattice mismatch induced strain. PL measurements revealed that porosity induced PL intensity enhancement was found in nanoporous samples. The resulting nanoporous GaN displays blue-shifted PL spectra compared to the as grown GaN. Appearance of the blue-shifted emission is correlated with the development of highly anisotropic structures in the morphology.
|Subjects:||Material Science > Nanostructured materials|
|Deposited On:||08 Apr 2009 02:25|
|Last Modified:||11 Aug 2009 15:53|
Available Versions of this Item
- Optical characterization of nanoporous GaN Through Electroless Wet Chemical Etching. (deposited 15 Jan 2009 07:52)
- Optical characterization of nanoporous GaN Through Electroless Wet Chemical Etching. (deposited 08 Apr 2009 02:25) [Currently Displayed]
Repository Staff Only: item control page