Kharuddin, K.N. Mohd. and Majlis, B.Yeop (2004) Electrical Characteristics of Al0.22Ga0.78As/In0.22Ga0.78As PHEMT with Gate Length in Nano Regime. ICSE2004 Proc. .
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| Item Type: | Article |
|---|---|
| Subjects: | Material Science > Nanostructured materials |
| ID Code: | 4559 |
| Deposited By: | CSMNT |
| Deposited On: | 08 Apr 2009 02:19 |
| Last Modified: | 08 Apr 2009 02:19 |
Available Versions of this Item
- Electrical Characteristics of Al0.22Ga0.78As/In0.22Ga0.78As PHEMT with Gate Length in Nano Regime. (deposited 14 Jan 2009 13:38)
- Electrical Characteristics of Al0.22Ga0.78As/In0.22Ga0.78As PHEMT with Gate Length in Nano Regime. (deposited 08 Apr 2009 02:19) [Currently Displayed]
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