Nano Archive

Electrical Characteristics of Al0.22Ga0.78As/In0.22Ga0.78As PHEMT with Gate Length in Nano Regime

Kharuddin, K.N. Mohd. and Majlis, B.Yeop (2004) Electrical Characteristics of Al0.22Ga0.78As/In0.22Ga0.78As PHEMT with Gate Length in Nano Regime. ICSE2004 Proc. .

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Item Type:Article
Subjects:Material Science > Nanostructured materials
ID Code:4559
Deposited By:CSMNT
Deposited On:08 Apr 2009 02:19
Last Modified:08 Apr 2009 02:19

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